Semiconductors

: (1498) products
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Product code
Description
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Manufacturer code
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Price
QTY
Zener Diode DZ, 18V/0.5WImage of Zener Diode DZ, 18V/0.5W

Zener Diode DZ, 18V/0.5W


Vz: 18 V;
Power: 0.5 W;
Number of Pins: 2;
Mounting: Axial leads;
 
 
0
pc
1+ 0.1000 BGN
Zener Diode DZ, 22V/0.5WImage of Zener Diode DZ, 22V/0.5W

Zener Diode DZ, 22V/0.5W


Vz: 22 V;
Power: 0.5 W;
Number of Pins: 2;
Mounting: Axial leads;
 
 
> 1000
pc
1+ 0.1000 BGN
Zener Diode DZ, 27V/0.5WImage of Zener Diode DZ, 27V/0.5W

Zener Diode DZ, 27V/0.5W


Vz: 27 V;
Power: 0.5 W;
Number of Pins: 2;
Mounting: Axial leads;
 
 
> 1000
pc
1+ 0.1000 BGN
Zener Diode DZ, 30V/0.5WImage of Zener Diode DZ, 30V/0.5W

Zener Diode DZ, 30V/0.5W


Vz: 30 V;
Power: 0.5 W;
Number of Pins: 2;
Mounting: Axial leads;
 
 
> 1000
pc
1+ 0.1000 BGN
Zener Diode DZ, 36V/0.5WImage of Zener Diode DZ, 36V/0.5W

Zener Diode DZ, 36V/0.5W


Vz: 36 V;
Power: 0.5 W;
Number of Pins: 2;
Mounting: Axial leads;
 
 
> 1000
pc
1+ 0.1000 BGN
Zener Diode DZ, 39V/0.5WImage of Zener Diode DZ, 39V/0.5W

Zener Diode DZ, 39V/0.5W


Vz: 39 V;
Power: 0.5 W;
Number of Pins: 2;
Mounting: Axial leads;
 
 
148
pc
1+ 0.1000 BGN
Insulation Mica Sheet (transistor TO-220)Image of Insulation Mica Sheet (transistor TO-220)
 
 
> 500
pc
1+ 0.1000 BGN
10+ 0.0700 BGN
25+ 0.0500 BGN
50+ 0.0420 BGN
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Transistor 2N5401, PNP, TO-92Image of Transistor 2N5401, PNP, TO-92

Transistor 2N5401, PNP, TO-92


Type: Bipolar;
Polarity: PNP;
Uceo /Max/: 150 V;
Ucbo: 160 V;
Ic /Max/: 0.2 A;
Frequency: 300 MHz;
Gain /Min hFE/: 50;
Power: 0.625 W;
Operating Temperature Min: -55°C;
Operating Temperature Max: 150°C;
Number of Pins: 3;
Case Style: TO-92;
Transistor 2N5401, PNP, TO-92 - pdf
82.9 KB
NATIONAL SEMICONDUCTOR
2N5401
472
pc
1+ 0.1100 BGN
Transistor BC548CBK, NPN, TO-92Image of Transistor BC548CBK, NPN, TO-92

Transistor BC548CBK, NPN, TO-92


Type: Bipolar;
Polarity: NPN;
Uceo /Max/: 30 V;
Ucbo: 30 V;
Ic /Max/: 0.1 A;
Frequency: 300 MHz;
Gain /Min hFE/: 270;
Power: 500 mW;
Operating Temperature Min: -55°C;
Operating Temperature Max: 150°C;
Number of Pins: 3;
Case Style: TO-92;
Transistor BC548CBK, NPN, TO-92 - pdf
82.1 KB
DIOTEC SEMICONDUCTOR
BC548CBK
101
pc
1+ 0.1200 BGN
20+ 0.0800 BGN
50+ 0.0600 BGN
100+ 0.0470 BGN
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Transistor BC546B, NPN, TO-92Image of Transistor BC546B, NPN, TO-92

Transistor BC546B, NPN, TO-92


Type: Bipolar;
Polarity: NPN;
Uceo /Max/: 65 V;
Ucbo: 80 V;
Ic /Max/: 0.1 A;
Frequency: 300 MHz;
Gain /Min hFE/: 200;
Power: 0.5 W;
Operating Temperature Min: -65°C;
Operating Temperature Max: 150°C;
Number of Pins: 3;
Case Style: TO-92;
Transistor BC546B, NPN, TO-92 - pdf
65.13 KB
FAIRCHILD SEMICONDUCTOR
BC546B
> 2000
pc
1+ 0.1200 BGN
20+ 0.0900 BGN
50+ 0.0700 BGN
100+ 0.0520 BGN
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Transistor BC556B, PNP, TO-92Image of Transistor BC556B, PNP, TO-92

Transistor BC556B, PNP, TO-92


Type: Bipolar;
Polarity: PNP;
Uceo /Max/: 65 V;
Ucbo: 80 V;
Ic /Max/: 0.1 A;
Frequency: 300 MHz;
Gain /Min hFE/: 220;
Power: 0.5 W;
Operating Temperature Min: -65°C;
Operating Temperature Max: 150°C;
Number of Pins: 3;
Case Style: TO-92;
Transistor BC556B, PNP, TO-92 - pdf
246.06 KB
NXP
BC556B
> 2000
pc
1+ 0.1200 BGN
20+ 0.0900 BGN
50+ 0.0700 BGN
100+ 0.0520 BGN
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Transistor BC557, PNP, TO-92Image of Transistor BC557, PNP, TO-92

Transistor BC557, PNP, TO-92


Type: Bipolar;
Polarity: PNP;
Uceo /Max/: 45 V;
Ucbo: 50 V;
Ic /Max/: 0.1 A;
Frequency: 100 MHz;
Gain /Min hFE/: 125;
Power: 500 mW;
Operating Temperature Min: -65°C;
Operating Temperature Max: 150°C;
Number of Pins: 3;
Case Style: TO-92;
Transistor BC557, PNP, TO-92 - pdf
75.71 KB
FAIRCHILD SEMICONDUCTOR
BC557
1027
pc
1+ 0.1200 BGN
50+ 0.0710 BGN
100+ 0.0514 BGN
200+ 0.0488 BGN
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Transistor BC558B, PNP, TO-92Image of Transistor BC558B, PNP, TO-92

Transistor BC558B, PNP, TO-92


Type: Bipolar;
Polarity: PNP;
Ucbo: 30 V;
Uces: 30 V;
Ic /Max/: 0.1 A;
Frequency: 220 MHz;
Power: 0.5 W;
Number of Pins: 3;
Case Style: TO-92;
Transistor BC558B, PNP, TO-92 - pdf
1.4 MB
PHILIPS
BC558B
1952
pc
1+ 0.1200 BGN
50+ 0.0710 BGN
100+ 0.0514 BGN
200+ 0.0488 BGN
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Transistor 2N5551, NPN, TO-92Image of Transistor 2N5551, NPN, TO-92

Transistor 2N5551, NPN, TO-92


Type: Bipolar;
Polarity: NPN;
Uceo /Max/: 160 V;
Ucbo: 180 V;
Ic /Max/: 0.6 A;
Frequency: 300 MHz;
Gain /Min hFE/: 80;
Power: 0.625 W;
Operating Temperature Min: -55°C;
Operating Temperature Max: 150°C;
Number of Pins: 3;
Case Style: TO-92;
Transistor 2N5551, NPN, TO-92 - pdf
137.39 KB
DIOTEC SEMICONDUCTOR
2N5551
1641
pc
1+ 0.1200 BGN
10+ 0.0900 BGN
20+ 0.0700 BGN
50+ 0.0590 BGN
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High efficient diode HER108, 1A/1000V, DO-41Image of High efficient diode HER108, 1A/1000V, DO-41

High efficient diode HER108, 1A/1000V, DO-41


Forward Current If /AV/: 1 A;
Forward Voltage Vf Max: 1.7 V;
Repetitive Reverse Voltage Vrrm Max: 1000 V;
Number of Pins: 2;
Body Diameter: 2.7 mm;
Case Style: DO-41;
Mounting: Axial leads;
High efficient diode HER108, 1A/1000V, DO-41 - pdf
168.49 KB
LUGUANG (LGE)
HER108
15
pc
1+ 0.1200 BGN
20+ 0.0800 BGN
50+ 0.0600 BGN
100+ 0.0480 BGN
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Fast recovery diode SY345/6-K, 1A/600VImage of Fast recovery diode SY345/6-K, 1A/600V

Fast recovery diode SY345/6-K, 1A/600V


Forward Current If /AV/: 1 A;
Repetitive Reverse Voltage Vrrm Max: 600 V;
Number of Pins: 2;
Body Diameter: 3 mm;
Mounting: Axial leads;
Fast recovery diode SY345/6-K, 1A/600V - pdf
64.05 KB
RFT
SY345/6-K
> 1000
pc
1+ 0.1200 BGN
Rectifier Diode 1N4007-TP, 1A/1000V, DO-41Image of Rectifier Diode 1N4007-TP, 1A/1000V, DO-41

Rectifier Diode 1N4007-TP, 1A/1000V, DO-41


Forward Current If /AV/: 1 A;
Forward Voltage Vf Max: 1.1 V;
Repetitive Reverse Voltage Vrrm Max: 1000 V;
Number of Pins: 2;
Body Diameter: 2.7 mm;
Case Style: DO-41;
Mounting: Axial leads;
Rectifier Diode 1N4007-TP, 1A/1000V, DO-41 - pdf
43.8 KB
MIC
1N4007-TP
0
pc
1+ 0.1200 BGN
20+ 0.0900 BGN
50+ 0.0700 BGN
100+ 0.0500 BGN
view more
Schottky Diode 1N5819, 1A/40V, DO-41Image of Schottky Diode 1N5819, 1A/40V, DO-41

Schottky Diode 1N5819, 1A/40V, DO-41


Forward Current If /AV/: 1 A;
Repetitive Reverse Voltage Vrrm Max: 40 V;
Number of Pins: 2;
Case Style: DO-41;
Mounting: Axial leads;
 
MDD SEMICONDUCTOR
1N5819
> 1000
pc
1+ 0.1200 BGN
20+ 0.0700 BGN
50+ 0.0500 BGN
100+ 0.0400 BGN
view more
Zener Diode PL, 9.1V/1WImage of Zener Diode PL, 9.1V/1W

Zener Diode PL, 9.1V/1W


Vz: 9.1 V;
Power: 1 W;
Number of Pins: 2;
Mounting: Axial leads;
 
BANEASA SEMICONDUCTOR
PL9V1Z
> 1000
pc
1+ 0.1200 BGN
Zener Diode PL, 10V, 1WImage of Zener Diode PL, 10V, 1W

Zener Diode PL, 10V, 1W


Vz: 10 V;
Power: 1 W;
Number of Pins: 2;
Mounting: Axial leads;
 
BANEASA SEMICONDUCTOR
PL10Z
> 1000
pc
1+ 0.1200 BGN
Zener Diode PL, 11V/1WImage of Zener Diode PL, 11V/1W

Zener Diode PL, 11V/1W


Vz: 11 V;
Power: 1 W;
Number of Pins: 2;
Mounting: Axial leads;
 
BANEASA SEMICONDUCTOR
PL11Z
> 1000
pc
1+ 0.1200 BGN
Zener Diode PL, 22V/1WImage of Zener Diode PL, 22V/1W

Zener Diode PL, 22V/1W


Vz: 22 V;
Power: 1 W;
Number of Pins: 2;
Mounting: Axial leads;
 
BANEASA SEMICONDUCTOR
PL22Z
> 1000
pc
1+ 0.1200 BGN
Zener Diode ZP, 4.7V/1WImage of Zener Diode ZP, 4.7V/1W

Zener Diode ZP, 4.7V/1W


Vz: 4.7 V;
Power: 1 W;
Number of Pins: 2;
Mounting: Axial leads;
 
 
822
pc
1+ 0.1200 BGN
Insulation Bush (transistor TO-220)Image of Insulation Bush (transistor TO-220)

Insulation Bush (transistor TO-220)


Diameter: 6 mm Height: 2.2 mm Operating temperature:
 
 
691
pc
1+ 0.1200 BGN
20+ 0.0800 BGN
50+ 0.0680 BGN
100+ 0.0580 BGN
view more
Insulation Bush (transistor TO-3)Image of Insulation Bush (transistor TO-3)

Insulation Bush (transistor TO-3)


Diameter: 7.1 mm Height: 3.5 mm Operating temperature:
 
 
271
pc
1+ 0.1200 BGN
20+ 0.0900 BGN
50+ 0.0800 BGN
100+ 0.0720 BGN
view more



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